- 您现在的位置：买卖IC网 > Sheet目录452 > IXFH14N60P (IXYS)MOSFET N-CH 600V 14A TO-247
IXFA14N60P
IXFP14N60P
IXFH14N60P
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
TO-220 (IXFP) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
V DS = 20V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 10 Ω (External)
7
13
2500
215
13
23
27
70
26
S
pF
pF
pF
ns
ns
ns
ns
Q g(on)
Q gs
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
36
16
nC
nC
Pins:
1 - Gate
2 - Drain
Q gd
R thJC
12
nC
0.42 ° C/W
R thCH
(TO-220)
(TO-247)
0.50
0.21
° C/W
° C/W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
I S
V GS = 0V
14
A
I SM
V SD
Repetitive, pulse width limited by T JM
I F = I S , V GS = 0V, Note 1
42
1.5
A
V
TO-247 (IXFH) Outline
t rr
I RM
Q RM
I F = 14A, -di/dt = 100A/ μ s
V R = 100V, V GS = 0V
6.0
0.6
200
ns
A
nC
1
2
3
?P
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
TO-263 (IXFA) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A 1
A 2
b
b 1
b 2
C
D
E
e
L
L1
? P
Q
R
S
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
3.55
5.89
4.32
6.15
5.3
2.54
2.6
1.4
2.13
3.12
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
BSC
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205
.780
.140
0.232
.170
242
.209
.102
.098
.055
.084
.123
.031
.845
.640
0.225
.800
.177
.144
0.252
.216
BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXFH150N17T
MOSFET N-CH 175V 150A TO-247
IXFH15N100P
MOSFET N-CH 1000V 15A TO-247
IXFH15N80
MOSFET N-CH 800V 15A TO-247AD
IXFH160N15T2
MOSFET N-CH 150V 160A TO-247
IXFH160N15T
MOSFET N-CH 150V 160A TO-247
IXFH16N90Q
MOSFET N-CH 900V 16A TO-247
IXFH20N100P
MOSFET N-CH 1000V 20A TO-247
IXFH20N60
MOSFET N-CH 600V 20A TO-247AD
相关代理商/技术参数
IXFH14N60P3
功能描述:MOSFET Polar3 HiPerFETs Power MOSFETs RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH14N80
功能描述:MOSFET 14 Amps 800V 0.7 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH14N80P
功能描述:MOSFET DIODE Id14 BVdass800 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH150
制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs
IXFH150N15P
功能描述:MOSFET 170 Amps 150V 0.013 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH150N17T
功能描述:MOSFET 150 Amps 175V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH150N17T2
制造商:IXYS Corporation 功能描述:MOSFET N-CH 175V 150A TO-247
IXFH150N20T
功能描述:MOSFET Trench HiperFETs Power MOSFETs RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube